Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology; Introduction Novel approaches to advance integrated circuitry beyond CMOS have focused on atom scale structures and their reliable fabrication [1]. Hydrogen-terminated silicon (H–Si) surfaces are one such versatile platform